FDC638P
Manufacturer:
On Semiconductor
Mfr.Part #:
FDC638P
Datasheet:
Description:
MOSFETs SSOT-6 SMD/SMT P-Channel number of channels:1 1.6 W -20 V Continuous Drain Current (ID):-4.5 A 14 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -20 V |
| Length | 3 mm |
| Width | 1.7 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 6 |
| Resistance | 48 MΩ |
| Height | 1 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.036 g |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -4.5 A |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 1.6 W |
| Power Dissipation | 1.6 W |
| Threshold Voltage | -800 mV |
| Number of Channels | 1 |
| Input capacitance | 1.16 nF |
| Continuous Drain Current (ID) | -4.5 A |
| Rds On Max | 48 mΩ |
| Drain to Source Voltage (Vdss) | -20 V |
| Turn-On Delay Time | 9 ns |
| Turn-Off Delay Time | 33 ns |
| Element Configuration | Single |
| Rise Time | 9 ns |
| Dual Supply Voltage | -20 V |
| Gate Charge | 14 nC |
| Drain to Source Resistance | 39 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | -800 mV |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 1.5 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 92
Distributors
pcbx
pcbxUnit Price$0.54365
Ext.Price$0.54365
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.54365 | $0.54365 |
| 10 | $0.53165 | $5.31650 |
| 25 | $0.52840 | $13.21000 |
| 50 | $0.52517 | $26.25850 |
| 100 | $0.52196 | $52.19600 |